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1 / 1 4 n ??? n - channel mosfet j cs 8hn60 c order codes ? marking ? package halogen free ? packaging d evice w eight jcs 8hn60 vc - o - v - n - b jcs 8hn60 vc ipak no tube 0.35 g(typ) jcs 8hn60 rc - o - r - n - b jcs 8hn60 r c dpak no tube 0.30 g(typ) jcs 8hn60 rc - o - r - n - a jcs 8hn60 rc dpak no reel 0.30 g(typ) jcs 8hn60 cc - o - c - n - b jcs 8hn60 cc to - 220c no tube 2.15 g(typ) jcs 8hn60 fc - o - f - n - b jcs 8hn60 fc to - 220mf no tube 2.20 g(typ) jcs 8hn60 sc - o - f - n - b jcs 8hn 60 sc to - 263 no tube 1.37 g(typ) jcs 8hn60 sc - o - f - n - a jcs 8hn60 sc to - 263 no reel 1.37 g(typ) jcs 8hn60 bc - o - f - n - b jcs 8hn60 bc to - 262 no tube 1.71 g(typ) ? main characteristics i d 8 . 0 a v dss 6 0 0 v rdson - max @vgs=10v 1. 6 ? qg - typ 3 2 nc ? ? ??? ? ? led ? applications ? high frequency switching mode power supply ? electronic ballast ? led power supply ? ? ? ? c rss ( ? 1 4 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 1 4 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? o rder message ? p ackage r
jcs 8hn60 c 20 1 510b 2 / 1 4 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit jcs 8hn60 c c /s c /b c/vc/rc jcs 8hn60 f c ???? dss 6 00 6 00 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 2 8 2 8 * a ??? gss 30 v ? ? 2 singl e pulsed avalanche energy as 42 0 mj ? ? 1 avalanche current ar 7 .0 a ?? ? 1 ar 1 2 . 8 mj ??? ? 3 peak diode recovery dv/dt ? d t c =2 5 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs 8hn60 c 20 1 510b 3 / 1 4 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 0 0 - - v ?? breakdown vol tage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ ???? zero gate voltage drain current i dss v ds = 6 0 0v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs = 10v , i d = 3. 5 a - 1. 2 6 1. 6 ? forward transconductance g fs v ds = 40v, i d = 3.5 a note 4 - 5 . 6 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 1 62 0 1 89 0 pf output capacitance c oss - 1 2 5 1 7 0 pf re verse transfer capacitance c rss - 14 2 0 pf r
jcs 8hn60 c 20 1 510b 4 / 1 4 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 3 0 0v,i d = 7 a,r g =25? note 4 5 - 11 31 ns ? turn - on rise time t r - 35 8 0 ns ?? turn - off delay time t d (off) - 46 95 ns ?? turn - off fall time t f - 40 92 ns ? total gate charge q g v ds = 48 0v , i d = 7 a v gs =10v note 4 5 - 3 2 41 nc ?? gate - source charge q gs - 6 - nc ?? gate - drain charge q gd - 15 - nc ????? drain - source di ode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 7 . 0 a maximum pulsed drain - source diode forward current i sm - - 28 a ? drain - source diode forward voltage v sd v gs =0v, i s = 7 .0 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 7 .0 a di f /dt=100a/ s (note 4) - 3 4 5 - ns ? reverse recovery charge q rr - 3 . 2 - c ? parameter symbol max unit jcs 8hn60 vc /rc /c c /sc /bc jcs 8hn60 fc ??? thermal resistance, junction to case rth(j - c) 1.04 3.2 /w ? thermal resistance, junction to ambient r th(j - a) 62.5 62.5 /w ? 1 ? 2 l = 1 4 mh, i as = 7 . 0 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 6 . 0 a,di/dt 3 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 1 4 mh, i as = 7 . 0 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 6 . 0 a,di/dt 3 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s, duty cycle2 5 essentially independent of operating temperature r
jcs 8hn60 c 20 1 510b 5 / 1 4 electrical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r 1 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 25 i d [a] v gs [v] 150 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a]
jcs 8hn60 c 20 1 510b 6 / 1 4 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximu m safe operating area for jcs 8hn60 f c maximum drain current vs. case temperature maximum safe operating area for jcs 8hn60 c c /s c /b c /rc/vc r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =3.0a r d (on) (normalized) t j [ ]
jcs 8hn60 c 20 1 510b 7 / 1 4 electrical characteristics (curves) transient thermal response curve for jcs8hn60cc/sc/bc/rc/vc transient thermal response curve for jcs 8hn60 fc r
jcs 8hn60 c 20 1 510b 8 / 1 4 ? package mechanical da ta ipak u nit mm r
jcs 8hn60 c 20 1 510b 9 / 1 4 ? package mechanical data dpak re el u nit mm r
jcs 8hn60 c 20 1 510b 10 / 1 4 ? package mechanical data to - 2 20 c u nit mm r
jcs 8hn60 c 20 1 510b 11 / 1 4 ? package mechanical data to - 2 20 mf u nit mm r
jcs 8hn60 c 20 1 510b 12 / 1 4 ? package mechanical data to - 2 6 2 u nit mm r
jcs 8hn60 c 20 1 510b 13 / 1 4 ? package mechanical data to - 2 63 reel u nit mm r
jcs 8hn60 c 20 1 510b 14 / 1 4 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? not e 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying o ur product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this s pecification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fa x 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 467153 3 r

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